IRF3710S

Symbol Micros: TIRF3710s

Case : TO263 (D2PAK)

Transistor N-Channel MOSFET; 100V; 20V; 23mOhm; 57A; 200W; -55°C ~ 175°C;

Parameters

Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF RoHS Case style: TO263t/r (D2PAK)

In stock:

314 pcs.

Quantity of pcs.	1+	5+	20+	100+	400+
Net price (EUR)	1,1371	0,7974	0,6772	0,6194	0,5986

Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF Case style: TO263 (D2PAK)

External warehouse:

4000 pcs.

Quantity of pcs.	800+ (Please wait for the order confirmation)
Net price (EUR)	0,6990

Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF Case style: TO263 (D2PAK)

External warehouse:

2380 pcs.

Quantity of pcs.	10+ (Please wait for the order confirmation)
Net price (EUR)	0,7607

Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF Case style: TO263 (D2PAK)

External warehouse:

8800 pcs.

Quantity of pcs.	800+ (Please wait for the order confirmation)
Net price (EUR)	0,7653

Manufacturer:: Infineon Manufacturer part number: IRF3710STRLPBF Case style: TO263 (D2PAK)

External warehouse:

42400 pcs.

Quantity of pcs.	800+ (Please wait for the order confirmation)
Net price (EUR)	0,7163

Open channel resistance:	23mOhm
Max. power loss:	200W
Max. drain current:	57A
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD