IRF3710ZSTRLPBF

Symbol Micros: TIRF3710zs
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 100V; 20V; 18mOhm; 59A; 160W; -55°C ~ 175°C; Replacement: IRF3710ZSTRLPBF; IRF3710ZSPBF; IRF3710ZSTRRPBF; IRF3710ZSPBF-GURT;
Parameters
Open channel resistance: 18mOhm
Max. drain current: 59A
Max. power loss: 160W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Manufacturer:: Infineon Manufacturer part number: IRF3710ZSTR RoHS Case style: TO263t/r (D2PAK)  
In stock:
730 pcs.
Quantity of pcs. 1+ 5+ 20+ 100+ 400+
Net price (EUR) 1,6078 1,1266 0,9577 0,8744 0,8467
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Packaging:
800
Manufacturer:: Infineon Manufacturer part number: IRF3710ZSTRLPBF Case style: TO263 (D2PAK)  
External warehouse:
1620 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 1,0229
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF3710ZSTRLPBF Case style: TO263 (D2PAK)  
External warehouse:
800 pcs.
Quantity of pcs. 800+ (Please wait for the order confirmation)
Net price (EUR) 0,8467
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 18mOhm
Max. drain current: 59A
Max. power loss: 160W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD