IRF4104S

Symbol Micros: TIRF4104s

46101

TIRF4104s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET HEXFET 40V 75A 140W 0,0055Ω

Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	140W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF4104S RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

10 pcs.

Quantity of pcs.	1+	5+	20+	100+	500+
Net price (EUR)	1,2231	0,8123	0,6738	0,6080	0,5822

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Packaging:
20 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	5,5mOhm
Max. drain current:	120A
Max. power loss:	140W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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