IRF4104S

Micros part number: TIRF4104s
Package: TO263 (D2PAK)
N-MOSFET HEXFET 40V 75A 140W 0,0055Ω
Parameters
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 140W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 40V
Producer: Infineon Technologies
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF4104S RoHS Package: TO263 (D2PAK)  
In stock:
10 pcs.
Quantity 1+ 2+ 5+ 10+ 20+
Net price (PLN) 5,2300 4,1000 3,1900 2,7700 2,4900
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Standard packaging:
20
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 140W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 40V
Producer: Infineon Technologies
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Montage: SMD