IRF4104S
Symbol Micros:
TIRF4104s
Case : TO263 (D2PAK)
N-MOSFET HEXFET 40V 75A 140W 0,0055Ω
Parameters
Open channel resistance: | 5,5mOhm |
Max. drain current: | 120A |
Max. power loss: | 140W |
Case: | TO263 (D2PAK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 40V |
Transistor type: | N-MOSFET |
Open channel resistance: | 5,5mOhm |
Max. drain current: | 120A |
Max. power loss: | 140W |
Case: | TO263 (D2PAK) |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 40V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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