IRF4104S

Symbol Micros: TIRF4104s
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Case : TO263 (D2PAK)
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N-MOSFET HEXFET 40V 75A 140W 0,0055Ω
Parameters
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 140W
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 40V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF4104S RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
10 pcs.
Quantity of pcs. 1+ 2+ 5+ 10+ 20+
Net price (EUR) 1,3009 1,0518 0,8465 0,7497 0,6851
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Packaging:
20
Open channel resistance: 5,5mOhm
Max. drain current: 120A
Max. power loss: 140W
Case: TO263 (D2PAK)
Manufacturer: Infineon Technologies
Max. drain-source voltage: 40V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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