IRF510

Symbol Micros: TIRF510
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Case : TO220
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N-MOSFET 4A 100V 40W 0.6Ω
Parameters
Open channel resistance: 540mOhm
Max. drain current: 5,6A
Max. power loss: 43W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF510 RoHS Case style: TO220  
In stock:
444 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 500+
Net price (EUR) 0,7584 0,4778 0,3734 0,3409 0,3293
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Packaging:
50/500
Open channel resistance: 540mOhm
Max. drain current: 5,6A
Max. power loss: 43W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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