IRF510S
Symbol Micros:
TIRF510s
Case : TO263 (D2PAK)
N-MOSFET HEXFET 100V 5,6A 43W 0,54Ω
Parameters
| Open channel resistance: | 540mOhm |
| Max. drain current: | 5,6A |
| Max. power loss: | 43W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
Manufacturer:: Siliconix
Manufacturer part number: IRF510S RoHS
Case style: TO263 (D2PAK)
In stock:
90 pcs.
| Quantity of pcs. | 2+ | 10+ | 50+ | 100+ | 400+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,6879 | 0,4308 | 0,3381 | 0,3196 | 0,2988 |
| Open channel resistance: | 540mOhm |
| Max. drain current: | 5,6A |
| Max. power loss: | 43W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | VISHAY |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
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