IRF520NS

Symbol Micros: TIRF520ns

43235

TIRF520ns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; HEXFET; 100V; 20V; 200mOhm; 9,7A; 48W; -55°C~175°C; Substitute: IRF520NSTRLPBF;

Parameters

Open channel resistance:	200mOhm
Max. drain current:	9,7A
Max. power loss:	48W
Case:	TO263 (D2PAK)
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	200mOhm
Max. drain current:	9,7A
Max. power loss:	48W
Case:	TO263 (D2PAK)
Manufacturer:	INFINEON
Max. drain-source voltage:	100V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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