IRF5210

Symbol Micros: TIRF5210
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Case : TO220
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P-MOSFET 40A 100V 200W 0.06Ω
Parameters
Open channel resistance: 60mOhm
Max. drain current: 40A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
         
 
Item available on request
Open channel resistance: 60mOhm
Max. drain current: 40A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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