IRF5210PBF

Symbol Micros: TIRF5210
Contractor Symbol:
Case : TO220
Technical drawing Add to favourites
Transistor P-Channel MOSFET; 100V; 20V; 60mOhm; 40A; 200W; -55°C ~ 175°C; Replacement: IRF5210PBF; IRF5210;
Parameters
Open channel resistance: 60mOhm
Max. drain current: 40A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Manufacturer:: International Rectifier Manufacturer part number: IRF5210PBF RoHS Case style: TO220 Datasheet
In stock:
526 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,2641 0,9659 0,7984 0,6997 0,6653
Add to comparison tool
Packaging:
50/500
Manufacturer:: Infineon Manufacturer part number: IRF5210PBF Case style: TO220  
External warehouse:
70545 pcs.
Quantity of pcs. 200+ (Please wait for the order confirmation)
Net price (EUR) 0,6653
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 60mOhm
Max. drain current: 40A
Max. power loss: 200W
Case: TO220
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Transistor type: P-MOSFET
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols