IRF5210 TO220

Symbol Micros: TIRF5210 c

503084

TIRF5210 c

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Case : TO220

Datasheet

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110V 35A 26m?@10V,15A 180W 1 Piece P-Channel TO-220 MOSFETs ROHS IRF5210PBF-JSM; IRF5210PBF;

Parameters

Open channel resistance:	55mOhm
Max. drain current:	40A
Max. power loss:	200W
Case:	TO220
Manufacturer:	JSMICRO
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	55mOhm
Max. drain current:	40A
Max. power loss:	200W
Case:	TO220
Manufacturer:	JSMICRO
Max. drain-source voltage:	100V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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