IRF5210STRLPBF

Symbol Micros: TIRF5210s
Contractor Symbol:
Case : TO263 (D2PAK)
Technical drawing Add to favourites
Transistor P-Channel MOSFET; 100V; 20V; 60mOhm; 38A; 170W; -55°C ~ 150°C; Replacement: IRF5210STRLPBF; IRF5210SPBF; IRF5210STRRPBF; IRF5210SPBF-GURT; IRF5
Parameters
Open channel resistance: 60mOhm
Max. drain current: 38A
Max. power loss: 170W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Manufacturer:: Infineon Manufacturer part number: IRF5210STRLPBF RoHS Case style: TO263t/r (D2PAK)  
In stock:
590 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 1,9869 1,6565 1,4681 1,3773 1,3238
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Packaging:
800
Manufacturer:: Infineon Manufacturer part number: IRF5210STRLPBF Case style: TO263 (D2PAK)  
External warehouse:
6380 pcs.
Quantity of pcs. 10+ (Please wait for the order confirmation)
Net price (EUR) 1,5924
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Packaging:
10
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF5210STRLPBF Case style: TO263 (D2PAK)  
External warehouse:
64800 pcs.
Quantity of pcs. 800+ (Please wait for the order confirmation)
Net price (EUR) 1,3238
Add to comparison tool
Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 60mOhm
Max. drain current: 38A
Max. power loss: 170W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Max. gate-source Voltage: 20V
Transistor type: P-MOSFET
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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