IRF5210S smd

Symbol Micros: TIRF5210s
Contractor Symbol:
Case : TO263 (D2PAK)
P-MOSFET 38A 100V 170W 0.06Ω
Parameters
Open channel resistance: 60mOhm
Max. drain current: 38A
Max. power loss: 170W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF5210STRLPBF RoHS Case style: TO263 (D2PAK)  
In stock:
75 pcs.
Quantity of pcs. 1+ 3+ 10+ 30+ 100+
Net price (EUR) 2,5137 2,0462 1,7753 1,6457 1,5717
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Packaging:
800
Open channel resistance: 60mOhm
Max. drain current: 38A
Max. power loss: 170W
Case: TO263 (D2PAK)
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 100V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD