IRF530A

Symbol Micros: TIRF530 a
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Case : TO220
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N-MOSFET 14A 100V 55W 110&mohm;
Parameters
Open channel resistance: 110mOhm
Max. drain current: 14A
Max. power loss: 55W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 110mOhm
Max. drain current: 14A
Max. power loss: 55W
Case: TO220
Manufacturer: ON SEMICONDUCTOR
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT

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