IRF530A

Symbol Micros: TIRF530 a

43237

TIRF530 a

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Case : TO220

Datasheet

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N-MOSFET 14A 100V 55W 110&mohm;

Parameters

Open channel resistance:	110mOhm
Max. drain current:	14A
Max. power loss:	55W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	110mOhm
Max. drain current:	14A
Max. power loss:	55W
Case:	TO220
Manufacturer:	ON SEMICONDUCTOR
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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