IRF530NS
Symbol Micros:
TIRF530 ns
Case : TO263 (D2PAK)
N-Channel MOSFET; 100V; 20V; 90mOhm; 17A; 70W; -55°C ~ 175°C; IRF530NSPBF; IRF530NSPBF-GURT; IRF530NSTRLPBF;
Parameters
| Open channel resistance: | 90mOhm |
| Max. drain current: | 17A |
| Max. power loss: | 70W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | International Rectifier |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Open channel resistance: | 90mOhm |
| Max. drain current: | 17A |
| Max. power loss: | 70W |
| Case: | TO263 (D2PAK) |
| Manufacturer: | International Rectifier |
| Max. drain-source voltage: | 100V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 20V |
| Operating temperature (range): | -55°C ~ 175°C |
| Mounting: | SMD |
Equivalents
Manufacturer::
JSMSEMI
Manufacturer part number:
IRF530NS RoHS
Case style:
TO263t/r (D2PAK)
In stock
100 pcs.
| Quantity of pcs. | 2+ | 10+ | 30+ | 100+ | 400+ |
| Net price (EUR) | 0,6432 | 0,4038 | 0,3357 | 0,2981 | 0,2794 |
Packaging: 100
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