IRF530NS JSMICRO

Symbol Micros: TIRF530 ns JSM
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Case : TO263 (D2PAK)
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Transistor N-Channel MOSFET; 100V; 20V; 38mOhm; 33A; 110W; -55°C ~ 150°C; Equivalent: IRF530NSPBF; IRF530NSTRLPBF; IRF530NSTRRPBF; SP001551118; SP001563332; SP001554040;
Parameters
Open channel resistance: 38mOhm
Max. drain current: 33A
Max. power loss: 110W
Case: TO263 (D2PAK)
Manufacturer: JSMICRO
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: JSMSEMI Manufacturer part number: IRF530NS RoHS Case style: TO263t/r (D2PAK)  
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 30+ 100+ 400+
Net price (EUR) 0,6411 0,4025 0,3346 0,2972 0,2784
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Packaging:
100
Open channel resistance: 38mOhm
Max. drain current: 33A
Max. power loss: 110W
Case: TO263 (D2PAK)
Manufacturer: JSMICRO
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD

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