IRF530NS TO-263-2 VBsemi Elec
Symbol Micros:
TIRF530 ns VBS
Case : TO263
100V 20A 1V 1 N-channel TO-263-2 MOSFETs ROHS
Parameters
Open channel resistance: | 100mOhm |
Max. drain current: | 20A |
Max. power loss: | 105W |
Case: | TO263 |
Manufacturer: | VBsemi |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Open channel resistance: | 100mOhm |
Max. drain current: | 20A |
Max. power loss: | 105W |
Case: | TO263 |
Manufacturer: | VBsemi |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 175°C |
Mounting: | SMD |
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