IRF530NS TO-263-2 VBsemi Elec

Symbol Micros: TIRF530 ns VBS

527429

TIRF530 ns VBS

Contractor Symbol:

Case : TO263

Datasheet

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100V 20A 1V 1 N-channel TO-263-2 MOSFETs ROHS

Parameters

Open channel resistance:	100mOhm
Max. drain current:	20A
Max. power loss:	105W
Case:	TO263
Manufacturer:	VBsemi
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	100mOhm
Max. drain current:	20A
Max. power loss:	105W
Case:	TO263
Manufacturer:	VBsemi
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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