IRF530S

Micros part number: TIRF530 s
Package: TO263 (D2PAK)
N-MOSFET 14A 100V 3.7W 0.160Ω IRF530SPBF
Parameters
Open channel resistance: 160mOhm
Max. drain current: 14A
Max. power loss: 88W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 100V
Producer: VISHAY
Transistor type: N-MOSFET
         
 
Pozycja dostępna na zamówienie
Open channel resistance: 160mOhm
Max. drain current: 14A
Max. power loss: 88W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 100V
Producer: VISHAY
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Montage: SMD