IRF530S

Symbol Micros: TIRF530 s

43239

TIRF530 s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 14A 100V 3.7W 0.160Ω IRF530SPBF

Parameters

Open channel resistance:	160mOhm
Max. drain current:	14A
Max. power loss:	88W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF530S RoHS Case style: TO263 (D2PAK)  

In stock:

190 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8533	0,5406	0,4278	0,3878	0,3714

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	160mOhm
Max. drain current:	14A
Max. power loss:	88W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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