IRF530S

Symbol Micros: TIRF530 s
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET 14A 100V 3.7W 0.160Ω IRF530SPBF
Parameters
Open channel resistance: 160mOhm
Max. drain current: 14A
Max. power loss: 88W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF530S RoHS Case style: TO263 (D2PAK)  
In stock:
190 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8412 0,5330 0,4218 0,3824 0,3661
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Packaging:
50
Open channel resistance: 160mOhm
Max. drain current: 14A
Max. power loss: 88W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD