G45P40T

Symbol Micros: TIRF5305 GO

397071

TIRF5305 GO

Contractor Symbol:

Case : TO220

Datasheet

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Transistor MOSFET; TO-220; P-Channel; NO ESD; -40V; -45A; 80W; ; -1.5V; 28mOhm IRF5305;

Parameters

Open channel resistance:	28mOhm
Max. drain current:	45A
Max. power loss:	80W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	28mOhm
Max. drain current:	45A
Max. power loss:	80W
Case:	TO220
Manufacturer:	GOFORD
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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