HIRF530NPBF HXY MOSFET
Symbol Micros:
TIRF530n HXY
Case : TO220
Transistor N-Channel MOSFET; 100V; 20V; 120mOhm; 17A; -55°C ~ 150°C; Equivalent: IRF530PBF; IRF530PBF-BE3; IRF530NPBF; SP001570120;
Parameters
Open channel resistance: | 120mOhm |
Max. drain current: | 17A |
Case: | TO220 |
Manufacturer: | HXY MOSFET |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Open channel resistance: | 120mOhm |
Max. drain current: | 17A |
Case: | TO220 |
Manufacturer: | HXY MOSFET |
Max. drain-source voltage: | 100V |
Transistor type: | N-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | THT |
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