IRF540S

Micros part number: TIRF540s
Package: TO263 (D2PAK)
N-MOSFET HEXFET 100V 28A 3.7W 0,077Ω
Parameters
Open channel resistance: 77mOhm
Max. drain current: 28A
Max. power loss: 150W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 100V
Producer: VISHAY
Transistor type: N-MOSFET
         
 
Pozycja dostępna na zamówienie
Open channel resistance: 77mOhm
Max. drain current: 28A
Max. power loss: 150W
Housing: TO263 (D2PAK)
Max. drain-source voltage: 100V
Producer: VISHAY
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Montage: SMD