IRF540S

Symbol Micros: TIRF540s

46107

TIRF540s

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Case : TO263 (D2PAK)

Datasheet

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N-MOSFET HEXFET 100V 28A 3.7W 0,077Ω

Parameters

Open channel resistance:	77mOhm
Max. drain current:	28A
Max. power loss:	150W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	77mOhm
Max. drain current:	28A
Max. power loss:	150W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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