IRF540S

Symbol Micros: TIRF540s

46107

TIRF540s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET HEXFET 100V 28A 3.7W 0,077Ω

Parameters

Open channel resistance:	77mOhm
Max. drain current:	28A
Max. power loss:	150W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF540S RoHS Case style: TO263 (D2PAK)  

In stock:

240 pcs.

Quantity of pcs.	1+	5+	50+	100+	500+
Net price (EUR)	1,2222	0,8132	0,6265	0,6052	0,5815

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Packaging:
50/500 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	77mOhm
Max. drain current:	28A
Max. power loss:	150W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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