IRF540S

Symbol Micros: TIRF540s
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET HEXFET 100V 28A 3.7W 0,077Ω
Parameters
Open channel resistance: 77mOhm
Max. drain current: 28A
Max. power loss: 150W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF540S RoHS Case style: TO263 (D2PAK)  
In stock:
240 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 500+
Net price (EUR) 1,2189 0,8110 0,6248 0,6036 0,5800
Add to comparison tool
Packaging:
50/500
Open channel resistance: 77mOhm
Max. drain current: 28A
Max. power loss: 150W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 100V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD