IRF5801

Symbol Micros: TIRF5801

112219

TIRF5801

Contractor Symbol:

Case : TSOT23-6

Datasheet

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Transistor N-Channel MOSFET; 200V; 30V; 2,2Ohm; 600mA; 2W; -55°C ~ 150°C;

Parameters

Open channel resistance:	2,2Ohm
Max. drain current:	600mA
Max. power loss:	2W
Case:	TSOT23-6
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF5801TR RoHS Case style: TSOT23-6 t/r  

In stock:

98 pcs.

Quantity of pcs.	3+	20+	100+	300+	1000+
Net price (EUR)	0,3967	0,2186	0,1718	0,1592	0,1526

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Packaging:
100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	2,2Ohm
Max. drain current:	600mA
Max. power loss:	2W
Case:	TSOT23-6
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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