IRF5801
Symbol Micros:
TIRF5801
Case : TSOT23-6
Transistor N-Channel MOSFET; 200V; 30V; 2,2Ohm; 600mA; 2W; -55°C ~ 150°C;
Parameters
| Open channel resistance: | 2,2Ohm |
| Max. drain current: | 600mA |
| Max. power loss: | 2W |
| Case: | TSOT23-6 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 200V |
| Transistor type: | N-MOSFET |
Manufacturer:: Infineon
Manufacturer part number: IRF5801TR RoHS
Case style: TSOT23-6 t/r
In stock:
98 pcs.
| Quantity of pcs. | 3+ | 20+ | 100+ | 300+ | 1000+ |
|---|---|---|---|---|---|
| Net price (EUR) | 0,3912 | 0,2155 | 0,1695 | 0,1570 | 0,1505 |
| Open channel resistance: | 2,2Ohm |
| Max. drain current: | 600mA |
| Max. power loss: | 2W |
| Case: | TSOT23-6 |
| Manufacturer: | Infineon Technologies |
| Max. drain-source voltage: | 200V |
| Transistor type: | N-MOSFET |
| Max. gate-source Voltage: | 30V |
| Operating temperature (range): | -55°C ~ 150°C |
| Mounting: | SMD |
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