IRF5803

Symbol Micros: TIRF5803
Contractor Symbol:
Case : TSOT23-6
Transistor P-Channel MOSFET; 40V; 20V; 190mOhm; 3,4A; 2W; -55°C ~ 150°C;
Parameters
Open channel resistance: 190mOhm
Max. drain current: 3,4A
Max. power loss: 2W
Case: TSOT23-6
Manufacturer: Infineon Technologies
Max. drain-source voltage: 40V
Transistor type: P-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF5803TR RoHS Case style: TSOT23-6 t/r Datasheet
In stock:
2000 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5209 0,3153 0,2429 0,2184 0,2079
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Packaging:
3000
Open channel resistance: 190mOhm
Max. drain current: 3,4A
Max. power loss: 2W
Case: TSOT23-6
Manufacturer: Infineon Technologies
Max. drain-source voltage: 40V
Transistor type: P-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD