IRF5803

Symbol Micros: TIRF5803

112127

TIRF5803

Contractor Symbol:

Case : TSOT23-6

Datasheet

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Transistor P-Channel MOSFET; 40V; 20V; 190mOhm; 3,4A; 2W; -55°C ~ 150°C;

Parameters

Open channel resistance:	190mOhm
Max. drain current:	3,4A
Max. power loss:	2W
Case:	TSOT23-6
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF5803TR RoHS Case style: TSOT23-6 t/r Datasheet

In stock:

2000 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,5235	0,3169	0,2441	0,2195	0,2089

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	190mOhm
Max. drain current:	3,4A
Max. power loss:	2W
Case:	TSOT23-6
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	40V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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