IRF5803
Symbol Micros:
TIRF5803
Case : TSOT23-6
Transistor P-Channel MOSFET; 40V; 20V; 190mOhm; 3,4A; 2W; -55°C ~ 150°C;
Parameters
Open channel resistance: | 190mOhm |
Max. drain current: | 3,4A |
Max. power loss: | 2W |
Case: | TSOT23-6 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 40V |
Transistor type: | P-MOSFET |
Open channel resistance: | 190mOhm |
Max. drain current: | 3,4A |
Max. power loss: | 2W |
Case: | TSOT23-6 |
Manufacturer: | Infineon Technologies |
Max. drain-source voltage: | 40V |
Transistor type: | P-MOSFET |
Max. gate-source Voltage: | 20V |
Operating temperature (range): | -55°C ~ 150°C |
Mounting: | SMD |
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