IRF60DM206 INFINEON

Symbol Micros: TIRF60dm206

176770

TIRF60dm206

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Datasheet

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Trans MOSFET N-CH 60V 130A 10-Pin Direct-FET ME T/R

Parameters

Open channel resistance:	2,9mOhm
Max. drain current:	130A
Max. power loss:	96W
Case:	DirectFET(ME)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	2,9mOhm
Max. drain current:	130A
Max. power loss:	96W
Case:	DirectFET(ME)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	60V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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