IRF610

Symbol Micros: TIRF610

6144

TIRF610

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 3.3A 200V 36W 1.5Ω

Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	3,3A
Max. power loss:	36W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF610PBF RoHS Case style: TO220  

In stock:

450 pcs.

Quantity of pcs.	2+	10+	50+	200+	450+
Net price (EUR)	0,5728	0,3592	0,2817	0,2559	0,2488

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Packaging:
50/450 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	3,3A
Max. power loss:	36W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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