IRF610

Symbol Micros: TIRF610

6144

TIRF610

Contractor Symbol:

Case : TO220

Datasheet

Technical drawing Add to favourites

N-MOSFET 3.3A 200V 36W 1.5Ω

Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	3,3A
Max. power loss:	36W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF610PBF RoHS Case style: TO220  

In stock:

584 pcs.

Quantity of pcs.	2+	10+	50+	200+	500+
Net price (EUR)	0,6255	0,3947	0,3093	0,2816	0,2723

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: IRF610PBF Case style: TO220  

External warehouse:

3725 pcs.

Quantity of pcs.	25+ (Please wait for the order confirmation)
Net price (EUR)	0,5611

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Packaging:
25

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	3,3A
Max. power loss:	36W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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