IRF610S

Symbol Micros: TIRF610s

112130

TIRF610s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

N-MOSFET 3.3A 200V 36W 1.5Ω

Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	3,3A
Max. power loss:	36W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF610S RoHS Case style: TO263 (D2PAK)  

In stock:

100 pcs.

Quantity of pcs.	1+	5+	50+	100+	500+
Net price (EUR)	1,0885	0,7241	0,5582	0,5396	0,5185

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	1,5Ohm
Max. drain current:	3,3A
Max. power loss:	36W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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