IRF610S

Symbol Micros: TIRF610s
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET 3.3A 200V 36W 1.5Ω
Parameters
Open channel resistance: 1,5Ohm
Max. drain current: 3,3A
Max. power loss: 36W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF610S RoHS Case style: TO263 (D2PAK)  
In stock:
100 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 500+
Net price (EUR) 1,0932 0,7272 0,5607 0,5419 0,5208
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Packaging:
50/100
Manufacturer:: Vishay Manufacturer part number: IRF610STRLPBF Case style: TO263 (D2PAK)  
External warehouse:
4000 pcs.
Quantity of pcs. 800+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5208
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Packaging:
800
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Manufacturer:: Vishay Manufacturer part number: IRF610SPBF Case style: TO263 (D2PAK)  
External warehouse:
6500 pcs.
Quantity of pcs. 1100+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,5208
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 1,5Ohm
Max. drain current: 3,3A
Max. power loss: 36W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD