IRFI614G

Symbol Micros: TIRF614 iso

43241

TIRF614 iso

Contractor Symbol:

Case : TO220iso

Datasheet

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Transistor N-Channel MOSFET; 250V; 20V; 2Ohm; 2,1A; 23W; -55°C~150°C;

Parameters

Open channel resistance:	2Ohm
Max. drain current:	2,1A
Max. power loss:	23W
Case:	TO220iso
Manufacturer:	VISHAY
Max. drain-source voltage:	250V
Max. drain-gate voltage:	10V

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• Parameters

Open channel resistance:	2Ohm
Max. drain current:	2,1A
Max. power loss:	23W
Case:	TO220iso
Manufacturer:	VISHAY
Max. drain-source voltage:	250V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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