IRF620

Symbol Micros: TIRF620

6745

TIRF620

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Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 800mOhm; 5,2A; 50W; -55°C ~ 150°C;

Parameters

Open channel resistance:	800mOhm
Max. drain current:	5,2A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	800mOhm
Max. drain current:	5,2A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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