IRF620

Symbol Micros: TIRF620
Contractor Symbol:
Case : TO220
Transistor N-Channel MOSFET; 200V; 20V; 800mOhm; 5,2A; 50W; -55°C ~ 150°C;
Parameters
Open channel resistance: 800mOhm
Max. drain current: 5,2A
Max. power loss: 50W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF620 RoHS Case style: TO220  
In stock:
250 pcs.
Quantity of pcs. 2+ 10+ 50+ 250+ 1000+
Net price (EUR) 0,8342 0,5279 0,4171 0,3770 0,3629
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Packaging:
50/250
Manufacturer:: Vishay Manufacturer part number: IRF620PBF Case style: TO220  
External warehouse:
100 pcs.
Quantity of pcs. 25+ (Please wait for the order confirmation)
Net price (EUR) 0,5720
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Packaging:
25
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Vishay Manufacturer part number: IRF620PBF Case style: TO220  
External warehouse:
1527 pcs.
Quantity of pcs. 400+ (Please wait for the order confirmation)
Net price (EUR) 0,3629
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Vishay Manufacturer part number: IRF620PBF Case style: TO220  
External warehouse:
2000 pcs.
Quantity of pcs. 50+ (Please wait for the order confirmation)
Net price (EUR) 0,3629
Add to comparison tool
Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 800mOhm
Max. drain current: 5,2A
Max. power loss: 50W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT