IRF620

Symbol Micros: TIRF620

6745

TIRF620

Contractor Symbol:

Case : TO220

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 800mOhm; 5,2A; 50W; -55°C ~ 150°C;

Parameters

Open channel resistance:	800mOhm
Max. drain current:	5,2A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF620 RoHS Case style: TO220  

In stock:

250 pcs.

Quantity of pcs.	2+	10+	50+	250+	1000+
Net price (EUR)	0,8054	0,5096	0,4027	0,3640	0,3504

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Packaging:
50/250 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	800mOhm
Max. drain current:	5,2A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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