IRF620G

Symbol Micros: TIRF620 iso

43242

TIRF620 iso

Contractor Symbol:

Case : TO220iso

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N-MOSFET 4.1A 200V 30W 0.8Ω

Parameters

Open channel resistance:	800mOhm
Max. drain current:	4,1A
Max. power loss:	30W
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	800mOhm
Max. drain current:	4,1A
Max. power loss:	30W
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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