IRF620S

Symbol Micros: TIRF620s

112131

TIRF620s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 800mOhm; 5,2A; 50W; -55°C ~ 150°C;

Parameters

Open channel resistance:	800mOhm
Max. drain current:	5,2A
Max. power loss:	50W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF620S RoHS Case style: TO263 (D2PAK)  

In stock:

50 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,7178	0,4547	0,3577	0,3254	0,3116

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	800mOhm
Max. drain current:	5,2A
Max. power loss:	50W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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