IRF620S

Symbol Micros: TIRF620s
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 200V; 20V; 800mOhm; 5,2A; 50W; -55°C ~ 150°C;
Parameters
Open channel resistance: 800mOhm
Max. drain current: 5,2A
Max. power loss: 50W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF620S RoHS Case style: TO263 (D2PAK)  
In stock:
50 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,7200 0,4561 0,3588 0,3264 0,3125
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Packaging:
50
Open channel resistance: 800mOhm
Max. drain current: 5,2A
Max. power loss: 50W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD