IRF630

Symbol Micros: TIRF630
Contractor Symbol:
Case : TO220
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N-MOSFET 9A 200V 74W 0.4Ω IRF630PBF (9A), IRF630NPBR (9.3A)
Parameters
Open channel resistance: 400mOhm
Max. power loss: 74W
Max. drain current: 9A
Case: TO220
Manufacturer: Inchange Semiconductors
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF630 RoHS Case style: TO220  
In stock:
155 pcs.
Quantity of pcs. 1+ 5+ 10+ 50+ 450+
Net price (EUR) 0,8587 0,5693 0,5110 0,4387 0,4083
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Packaging:
50/450
Open channel resistance: 400mOhm
Max. power loss: 74W
Max. drain current: 9A
Case: TO220
Manufacturer: Inchange Semiconductors
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 150°C
Mounting: THT

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