IRF630

Symbol Micros: TIRF630
Contractor Symbol:
Case : TO220
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N-MOSFET 9A 200V 74W 0.4Ω IRF630PBF (9A), IRF630NPBR (9.3A)
Parameters
Open channel resistance: 400mOhm
Max. drain current: 9A
Max. power loss: 74W
Case: TO220
Manufacturer: Inchange Semiconductors
Max. drain-source voltage: 200V
Max. gate-source Voltage: 20V
Manufacturer:: Siliconix Manufacturer part number: IRF630 RoHS Case style: TO220  
In stock:
105 pcs.
Quantity of pcs. 1+ 5+ 10+ 50+ 450+
Net price (EUR) 0,8320 0,5516 0,4951 0,4250 0,3956
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Packaging:
50/450
Manufacturer:: Vishay Manufacturer part number: IRF630PBF Case style: TO220  
External warehouse:
2800 pcs.
Quantity of pcs. 50+ (Please wait for the order confirmation)
Net price (EUR) 0,3956
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: ST Manufacturer part number: IRF630 Case style: TO220  
External warehouse:
3345 pcs.
Quantity of pcs. 350+ (Please wait for the order confirmation)
Net price (EUR) 0,3956
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Vishay Manufacturer part number: IRF630PBF Case style: TO220  
External warehouse:
2330 pcs.
Quantity of pcs. 1000+ (Please wait for the order confirmation)
Net price (EUR) 0,3956
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Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 400mOhm
Max. drain current: 9A
Max. power loss: 74W
Case: TO220
Manufacturer: Inchange Semiconductors
Max. drain-source voltage: 200V
Max. gate-source Voltage: 20V
Transistor type: N-MOSFET
Operating temperature (range): -65°C ~ 150°C
Mounting: THT

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