IRF630

Symbol Micros: TIRF630
Contractor Symbol:
Case : TO220
Technical drawing Add to favourites
N-MOSFET 9A 200V 74W 0.4Ω IRF630PBF (9A), IRF630NPBR (9.3A)
Parameters
Open channel resistance: 400mOhm
Max. drain current: 9A
Max. power loss: 74W
Case: TO220
Manufacturer: Inchange Semiconductors
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF630 RoHS Case style: TO220  
In stock:
215 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 450+
Net price (EUR) 0,7986 0,5023 0,3935 0,3565 0,3472
Add to comparison tool
Packaging:
50/450
Open channel resistance: 400mOhm
Max. drain current: 9A
Max. power loss: 74W
Case: TO220
Manufacturer: Inchange Semiconductors
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 150°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols