IRF630

Symbol Micros: TIRF630
Contractor Symbol:
Case : TO220
Technical drawing Add to favourites
N-MOSFET 9A 200V 74W 0.4Ω IRF630PBF (9A), IRF630NPBR (9.3A)
Parameters
Open channel resistance: 400mOhm
Max. power loss: 74W
Max. drain current: 9A
Case: TO220
Manufacturer: Inchange Semiconductors
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF630 RoHS Case style: TO220  
In stock:
155 pcs.
Quantity of pcs. 1+ 5+ 10+ 50+ 450+
Net price (EUR) 0,8571 0,5683 0,5100 0,4378 0,4076
Add to comparison tool
Packaging:
50/450
Manufacturer:: Infineon Manufacturer part number: IRF630NPBF Case style: TO220  
External warehouse:
3250 pcs.
Quantity of pcs. 1000+ (Please wait for the order confirmation)
Net price (EUR) 0,4076
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF630NPBF Case style: TO220  
External warehouse:
66050 pcs.
Quantity of pcs. 2000+ (Please wait for the order confirmation)
Net price (EUR) 0,4076
Add to comparison tool
Packaging:
1000
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Manufacturer:: Infineon Manufacturer part number: IRF630NPBF Case style: TO220  
External warehouse:
49863 pcs.
Quantity of pcs. 600+ (Please wait for the order confirmation)
Net price (EUR) 0,4076
Add to comparison tool
Packaging:
100
Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.
Open channel resistance: 400mOhm
Max. power loss: 74W
Max. drain current: 9A
Case: TO220
Manufacturer: Inchange Semiconductors
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -65°C ~ 150°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols