IRF630N TO220

Symbol Micros: TIRF630n

87197

TIRF630n

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Case : TO220

Datasheet

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N-MOSFET 9.3A 200V 82W IRF630NPBF

Parameters

Open channel resistance:	300mOhm
Max. drain current:	9,3A
Max. power loss:	82W
Case:	TO220
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF630N RoHS Case style: TO220 Datasheet

In stock:

230 pcs.

Quantity of pcs.	1+	5+	20+	50+	350+
Net price (EUR)	0,9336	0,6201	0,5124	0,4773	0,4446

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Packaging:
50/350 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	300mOhm
Max. drain current:	9,3A
Max. power loss:	82W
Case:	TO220
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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