IRF630NS smd

Symbol Micros: TIRF630ns

39168

TIRF630ns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 9.3A 200V 82W 0.3Ω Replacement: IRF630NSPBF

Parameters

Open channel resistance:	300mOhm
Max. drain current:	9,3A
Max. power loss:	82W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V

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• Parameters

Open channel resistance:	300mOhm
Max. drain current:	9,3A
Max. power loss:	82W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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