IRF630NS smd

Symbol Micros: TIRF630ns

39168

TIRF630ns

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 9.3A 200V 82W 0.3Ω Replacement: IRF630NSPBF

Parameters

Open channel resistance:	300mOhm
Max. drain current:	9,3A
Max. power loss:	82W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF630NS RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

50 pcs.

Quantity of pcs.	1+	3+	10+	20+	50+
Net price (EUR)	0,9882	0,7092	0,5579	0,5106	0,4704

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	300mOhm
Max. drain current:	9,3A
Max. power loss:	82W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

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