IRF630S

Symbol Micros: TIRF630s

112134

TIRF630s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 400mOhm; 9A; 74W; -55°C ~ 150°C;

Parameters

Open channel resistance:	400mOhm
Max. drain current:	9A
Max. power loss:	74W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF630S RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

30 pcs.

Quantity of pcs.	2+	10+	50+	200+	1000+
Net price (EUR)	0,8480	0,5386	0,4240	0,3873	0,3690

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: IRF630STRLPBF Case style: TO263 (D2PAK)  

External warehouse:

800 pcs.

Quantity of pcs.	800+ (Please wait for the order confirmation)
Net price (EUR)	0,4964

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Packaging:
800

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	400mOhm
Max. drain current:	9A
Max. power loss:	74W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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