IRF630S

Symbol Micros: TIRF630s

112134

TIRF630s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 400mOhm; 9A; 74W; -55°C ~ 150°C;

Parameters

Open channel resistance:	400mOhm
Max. drain current:	9A
Max. power loss:	74W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF630S RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

30 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	0,8727	0,6404	0,5138	0,4410	0,4152

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: IRF630SPBF Case style: TO263 (D2PAK)  

External warehouse:

750 pcs.

Quantity of pcs.	250+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4652

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Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	400mOhm
Max. drain current:	9A
Max. power loss:	74W
Case:	TO263 (D2PAK)
Manufacturer:	International Rectifier
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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