IRF630S

Symbol Micros: TIRF630s
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 200V; 20V; 400mOhm; 9A; 74W; -55°C ~ 150°C;
Parameters
Open channel resistance: 400mOhm
Max. drain current: 9A
Max. power loss: 74W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF630S RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
30 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 0,8689 0,6377 0,5115 0,4391 0,4134
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Packaging:
50
Open channel resistance: 400mOhm
Max. drain current: 9A
Max. power loss: 74W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD