IRF640

Symbol Micros: TIRF640
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Case : TO220
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N-MOSFET 18A 200V 125W 0.18Ω
Parameters
Open channel resistance: 180mOhm
Max. drain current: 18A
Max. power loss: 125W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 180mOhm
Max. drain current: 18A
Max. power loss: 125W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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