IRF640

Symbol Micros: TIRF640

1780

TIRF640

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 18A 200V 125W 0.18Ω

Parameters

Open channel resistance:	180mOhm
Max. drain current:	18A
Max. power loss:	125W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Vishay Manufacturer part number: IRF640PBF Case style: TO220  

External warehouse:

25 pcs.

Quantity of pcs.	1+ (Please wait for the order confirmation)
Net price (EUR)	1,2935

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Packaging:
1

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

Manufacturer:: Vishay Manufacturer part number: IRF640PBF Case style: TO220  

External warehouse:

2325 pcs.

Quantity of pcs.	25+ (Please wait for the order confirmation)
Net price (EUR)	0,5535

Add to comparison tool Add inquiry (RFQ)

Packaging:
25

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	180mOhm
Max. drain current:	18A
Max. power loss:	125W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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