IRF640NLPBF IR

Symbol Micros: TIRF640nl
Contractor Symbol:
Case : TO262
N-MOSFET 200V 18A 150mΩ 150W
Parameters
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO262
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF640NL RoHS Case style: TO262 Datasheet
In stock:
75 pcs.
Quantity of pcs. 1+ 5+ 50+ 100+ 500+
Net price (EUR) 1,0114 0,6727 0,5185 0,5022 0,4812
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Packaging:
50/100
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO262
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: THT