IRF640NLPBF IR

Symbol Micros: TIRF640nl

105030

TIRF640nl

Contractor Symbol:

Case : TO262

Datasheet

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N-MOSFET 200V 18A 150mΩ 150W

Parameters

Open channel resistance:	150mOhm
Max. drain current:	18A
Max. power loss:	150W
Case:	TO262
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF640NL RoHS Case style: TO262 Datasheet

In stock:

75 pcs.

Quantity of pcs.	1+	5+	50+	100+	500+
Net price (EUR)	1,0158	0,6756	0,5208	0,5044	0,4833

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	150mOhm
Max. drain current:	18A
Max. power loss:	150W
Case:	TO262
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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