IRF640NS smd

Symbol Micros: TIRF640ns
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Case : TO263 (D2PAK)
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Transistor N-Channel MOSFET; 200V; 20V; 150mOhm; 18A; 150W; -55°C ~ 175°C;
Parameters
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: International Rectifier Manufacturer part number: IRF640NS RoHS Case style: TO263 (D2PAK) Datasheet
In stock:
50 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,6815 1,3425 1,1487 1,0311 0,9896
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Packaging:
50
Open channel resistance: 150mOhm
Max. drain current: 18A
Max. power loss: 150W
Case: TO263 (D2PAK)
Manufacturer: International Rectifier
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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