IRF640NS D2PAK

Symbol Micros: TIRF640ns c

526477

TIRF640ns c

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 200V; 30V; 180mOhm; 18A; 130W; -55°C ~ 150°C; Substitute: IRF640NSTRLPBF; IRF640NSPBF; IRF640NSPBF-GURT; IRF640NSTRRPBF;

Parameters

Open channel resistance:	180mOhm
Max. drain current:	18A
Max. power loss:	150W
Case:	TO263
Manufacturer:	MINOS
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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Estimated date:
2026-12-31

Quantity of pcs.: 100

• Parameters

Open channel resistance:	180mOhm
Max. drain current:	18A
Max. power loss:	150W
Case:	TO263
Manufacturer:	MINOS
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-50°C ~ 150°C
Mounting:	SMD

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