IRF640S

Symbol Micros: TIRF640s

10061

TIRF640s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 180mOhm; 18A; 130W; -55°C ~ 150°C;

Parameters

Open channel resistance:	180mOhm
Max. power loss:	130W
Max. drain current:	18A
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	180mOhm
Max. power loss:	130W
Max. drain current:	18A
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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