IRF640S

Symbol Micros: TIRF640s

10061

TIRF640s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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Transistor N-Channel MOSFET; 200V; 20V; 180mOhm; 18A; 130W; -55°C ~ 150°C;

Parameters

Open channel resistance:	180mOhm
Max. drain current:	18A
Max. power loss:	130W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF640S RoHS Case style: TO263 (D2PAK)  

In stock:

42 pcs.

Quantity of pcs.	1+	3+	10+	50+	200+
Net price (EUR)	1,2107	0,9252	0,7653	0,6716	0,6374

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Packaging:
50 Quantity (multiple: 1)

- +

Manufacturer:: Vishay Manufacturer part number: IRF640SPBF Case style: TO263 (D2PAK)  

External warehouse:

1145 pcs.

Quantity of pcs.	1000+ (Please wait for the order confirmation)
Net price (EUR)	0,6374

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Packaging:
1000

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Delivery within 4-7 business days.
Minimum order amount
must exceed 40 Euro.

• Parameters

Open channel resistance:	180mOhm
Max. drain current:	18A
Max. power loss:	130W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	200V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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