IRF640S

Symbol Micros: TIRF640s
Contractor Symbol:
Case : TO263 (D2PAK)
Transistor N-Channel MOSFET; 200V; 20V; 180mOhm; 18A; 130W; -55°C ~ 150°C;
Parameters
Open channel resistance: 180mOhm
Max. drain current: 18A
Max. power loss: 130W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF640S RoHS Case style: TO263 (D2PAK)  
In stock:
80 pcs.
Quantity of pcs. 1+ 3+ 10+ 50+ 200+
Net price (EUR) 1,2379 0,9460 0,7825 0,6867 0,6517
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Packaging:
50
Open channel resistance: 180mOhm
Max. drain current: 18A
Max. power loss: 130W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 200V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD