IRF7103TRPBF

Symbol Micros: TIRF7103
Contractor Symbol:
Case : SOP08
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Transistor 2xN-Channel MOSFET; 50V; 20V; 200mOhm; 3A; 2W; -55°C ~ 150°C; Odpowiednik: IRF7103TRPBF; IRF7103PBF; IRF7103TR; IRF7103PBF-GURT; IRF7103 SMD;
Parameters
Open channel resistance: 200mOhm
Max. drain current: 3A
Max. power loss: 2W
Case: SOP08
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 50V
Transistor type: 2xN-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF7103TRPBF RoHS Case style: SOP08t/r  
In stock:
35813 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5517 0,3509 0,2770 0,2516 0,2401
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Packaging:
4000
Manufacturer:: Infineon Manufacturer part number: IRF7103TRPBF RoHS Case style: SOP08t/r  
In stock:
0 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,5517 0,3509 0,2770 0,2516 0,2401
Add to comparison tool
Packaging:
1715
Open channel resistance: 200mOhm
Max. drain current: 3A
Max. power loss: 2W
Case: SOP08
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 50V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD
Detailed description

Manufacturer: INTERNATIONAL RECTIFIER
Transistor type: N-MOSFET x2
Polarisation: unipolar
Transistor kind: HEXFET
Drain-source voltage: 50V
Drain current: 3A
Power: 2W
Case: SOP08
Gate-source voltage: 20V
On-state resistance: 130mΩ
Junction-to-ambient thermal resistance: 62.5K/W
Mounting: SMD
Gate charge: 12nC

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