IRF710SPBF

Symbol Micros: TIRF710s

170044

TIRF710s

Contractor Symbol:

Case : DirectFET

Datasheet

Technical drawing Add to favourites

Transistor N-Channel MOSFET; 400V; 20V; 3,6Ohm; 2A; 3,1W; -55°C~150°C; Substitute: IRF710SPBF;

Parameters

Open channel resistance:	3,6Ohm
Max. drain current:	2A
Max. power loss:	3,1W
Manufacturer:	VISHAY
Max. drain-source voltage:	400V
Transistor type:	MOSFET
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Vishay Manufacturer part number: IRF710SPBF Case style: DirectFET  

External warehouse:

500 pcs.

Quantity of pcs.	350+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,3485

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Packaging:
50

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Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	3,6Ohm
Max. drain current:	2A
Max. power loss:	3,1W
Manufacturer:	VISHAY
Max. drain-source voltage:	400V
Transistor type:	MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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