IRF7351

Symbol Micros: TIRF7351

77948

TIRF7351

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

2xN -MOSFET HEXFET 8A 60V 2W 0.18Ω

Parameters

Open channel resistance:	17,8mOhm
Max. drain current:	8A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF7351TR RoHS Case style: SOP08t/r  

In stock:

486 pcs.

Quantity of pcs.	1+	3+	10+	30+	100+
Net price (EUR)	1,9901	1,5770	1,3423	1,2344	1,1710

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Packaging:
500 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF7351TRPBF Case style: SOP08  

External warehouse:

19000 pcs.

Quantity of pcs.	4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,1710

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Packaging:
4000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	17,8mOhm
Max. drain current:	8A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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