IRF7422D2

Symbol Micros: TIRF7422d2

40716

TIRF7422d2

Contractor Symbol:

Case : SOP08

Datasheet

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P-MOSFET + Schottky Diode 4.3A 20V 2W 0.09Ω

Parameters

Open channel resistance:	140mOhm
Max. drain current:	4,3A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET

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• Parameters

Open channel resistance:	140mOhm
Max. drain current:	4,3A
Max. power loss:	2W
Case:	SOP08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	20V
Transistor type:	P-MOSFET
Max. gate-source Voltage:	12V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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