PTS6012 SO8 HT SEMI

Symbol Micros: TIRF7478 HTSEMI

532398

TIRF7478 HTSEMI

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

Tranzystor N-Channel MOSFET; 60V; 20V; 30mOhm; 7A; 2,5W; -55°C ~ 150°C; Odpowiednik: PTS6012; IRF7478PBF; IRF7478TRPBF; IRF7478PBF-GURT; Wycofano z produkcji; IRF7478; PTS6012; YFW15N06S; TPM60V8NS8; IRF7478TRPBF-VB;

Parameters

Open channel resistance:	24mOhm
Max. drain current:	12A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	HT
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: HT SEMI Manufacturer part number: PTS6012 RoHS PJ4DJ Case style: SOP08t/r Datasheet

In stock:

3000 pcs.

Quantity of pcs.	5+	20+	100+	500+	3000+
Net price (EUR)	0,2415	0,1340	0,0890	0,0743	0,0691

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Packaging:
3000 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	24mOhm
Max. drain current:	12A
Max. power loss:	3W
Case:	SOP08
Manufacturer:	HT
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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