IRF7811AVTR

Symbol Micros: TIRF7811AVTR VBS

366451

TIRF7811AVTR VBS

Contractor Symbol:

Case : SOP08

Datasheet

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Transistor N-Channel MOSFET; 20V; 12A; 3,6Ohm; 10V; 4W; -55°C~150°C; Substitute: IRF7811AVTRPBF-VB;

Parameters

Open channel resistance:	3,6Ohm
Max. drain current:	12A
Max. power loss:	4W
Case:	SOP08
Manufacturer:	VBsemi
Max. drain-source voltage:	20V
Max. drain-gate voltage:	10V

All parameters

Manufacturer:: VBsemi Manufacturer part number: IRF7811AVTR-VB RoHS Case style: SOP08t/r Datasheet

In stock:

100 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6738	0,4226	0,3521	0,3122	0,2934

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Packaging:
100 Quantity (multiple: 1)

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Manufacturer:: VBsemi Manufacturer part number: IRF7811AVTR-VB RoHS Case style: SOP08t/r Datasheet

In stock:

30 pcs.

Quantity of pcs.	2+	10+	30+	100+	400+
Net price (EUR)	0,6738	0,4226	0,3521	0,3122	0,2934

Add to comparison tool Add inquiry (RFQ)

Packaging:
400 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	3,6Ohm
Max. drain current:	12A
Max. power loss:	4W
Case:	SOP08
Manufacturer:	VBsemi
Max. drain-source voltage:	20V
Max. drain-gate voltage:	10V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	16V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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