IRF7842TRPBF

Symbol Micros: TIRF7842

105568

TIRF7842

Contractor Symbol:

Case : SOIC08

Datasheet

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Transistor N-Channel MOSFET; 40V; 20V; 5,9mOhm; 18A; 2,5W; -55°C ~ 150°C; Substitute: IRF7842TRPBF; IRF7842PBF-GURT; IRF7842PBF;

Parameters

Open channel resistance:	5,9mOhm
Max. drain current:	18A
Max. power loss:	2,5W
Case:	SOIC08
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	5,9mOhm
Max. drain current:	18A
Max. power loss:	2,5W
Case:	SOIC08
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	40V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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