IRF7855

Symbol Micros: TIRF7855

43040

TIRF7855

Contractor Symbol:

Case : SOP08

Datasheet

Technical drawing Add to favourites

N-MOSFET HEXFET 12A 60V 2.5W 0.0094Ω IRF7855PBF IRF7855TRPBF IRF7855PBF-GURT

Parameters

Open channel resistance:	9,4mOhm
Max. drain current:	12A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Infineon Manufacturer part number: IRF7855TRPBF Case style: SOP08  

External warehouse:

6050 pcs.

Quantity of pcs.	50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4836

Add to comparison tool Add inquiry (RFQ)

Packaging:
50

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

Manufacturer:: Infineon Manufacturer part number: IRF7855TRPBF Case style: SOP08  

External warehouse:

4000 pcs.

Quantity of pcs.	4000+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	0,4238

Add to comparison tool Add inquiry (RFQ)

Packaging:
4000

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	9,4mOhm
Max. drain current:	12A
Max. power loss:	2,5W
Case:	SOP08
Manufacturer:	Infineon Technologies
Max. drain-source voltage:	60V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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