IRF8010

Symbol Micros: TIRF8010

48062

TIRF8010

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET HEXFET 80A 100V 260W 0.015Ω

Parameters

Open channel resistance:	15mOhm
Max. drain current:	80A
Max. power loss:	260W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: International Rectifier Manufacturer part number: IRF8010 RoHS Case style: TO220 Datasheet

In stock:

132 pcs.

Quantity of pcs.	1+	3+	10+	47+	188+
Net price (EUR)	2,0378	1,6690	1,4539	1,3238	1,2742

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Packaging:
50/200 Quantity (multiple: 1)

- +

Manufacturer:: Infineon Manufacturer part number: IRF8010PBF Case style: TO220  

External warehouse:

710 pcs.

Quantity of pcs.	10+ (Need a significantly larger quantity? Ask for price).
Net price (EUR)	1,2742

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Packaging:
10

Place an order

Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.

• Parameters

Open channel resistance:	15mOhm
Max. drain current:	80A
Max. power loss:	260W
Case:	TO220
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 175°C
Mounting:	THT

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