IRF8010S

Symbol Micros: TIRF8010s

40752

TIRF8010s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

Technical drawing Add to favourites

N-MOSFET HEXFET 80A 100V 260W 0.015Ω

Parameters

Open channel resistance:	15mOhm
Max. drain current:	80A
Max. power loss:	260W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V

All parameters

         

 

Add inquiry (RFQ)

Item available on request

• Parameters

Open channel resistance:	15mOhm
Max. drain current:	80A
Max. power loss:	260W
Case:	TO263 (D2PAK)
Manufacturer:	Infineon (IRF)
Max. drain-source voltage:	100V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 175°C
Mounting:	SMD

Edit Symbol

Delete associated with Contractor Symbol

Symbol Micros

Are you sure you want to delete your symbols? Your Symbol Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete Delete Delete All Contractor Symbols Save

Add Symbol

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols Save

The provided name is already taken

The symbol contains forbidden characters or is too short. The symbol can consist of upper and lower case letters, spaces, special characters: "-", "/", "." and must have at least 3 characters.