IRF820

Symbol Micros: TIRF820

6537

TIRF820

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 3A 500V 50W 3Ω

Parameters

Open channel resistance:	3Ohm
Max. drain current:	2,5A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF820 RoHS ...N23K AN Case style: TO220  

In stock:

200 pcs.

Quantity of pcs.	2+	10+	50+	200+	650+
Net price (EUR)	0,8105	0,5115	0,4017	0,3667	0,3527

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Packaging:
50 Quantity (multiple: 1)

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Manufacturer:: Siliconix Manufacturer part number: IRF820 RoHS Case style: TO220  

In stock:

370 pcs.

Quantity of pcs.	2+	10+	50+	200+	650+
Net price (EUR)	0,8105	0,5115	0,4017	0,3667	0,3527

Add to comparison tool Add inquiry (RFQ)

Packaging:
50/650 Quantity (multiple: 1)

- +

• Parameters

Open channel resistance:	3Ohm
Max. drain current:	2,5A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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