IRF820

Symbol Micros: TIRF820

6537

TIRF820

Contractor Symbol:

Case : TO220

Datasheet

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Tranzystor N-Channel MOSFET; 500V; 20V; 3Ohm; 2,5A; 50W; -55°C ~ 150°C; Odpowiednik: IRF820PBF;

Parameters

Open channel resistance:	3Ohm
Max. drain current:	2,5A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF820 RoHS Case style: TO220  

In stock:

570 pcs.

Quantity of pcs.	2+	10+	50+	200+	650+
Net price (EUR)	0,7894	0,4982	0,3913	0,3572	0,3435

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Packaging:
50 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3Ohm
Max. drain current:	2,5A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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