IRF820 TO220 LGE

Symbol Micros: TIRF820 LGE
Contractor Symbol:
Case : TO220
Technical drawing Add to favourites
N-MOSFET 3A 500V 50W 3Ω
Parameters
Open channel resistance: 3Ohm
Max. drain current: 2,5A
Max. power loss: 50W
Case: TO220
Manufacturer: LGE
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
         
 
Item available on request
Open channel resistance: 3Ohm
Max. drain current: 2,5A
Max. power loss: 50W
Case: TO220
Manufacturer: LGE
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel Delete All Contractor Symbols

Add Symbol


Symbol Micros

Contractor Symbol

Add another Contractor Symbol

Cancel All Contractor Symbols