IRF820 TO220 LGE

Symbol Micros: TIRF820 LGE

84399

TIRF820 LGE

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Case : TO220

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N-MOSFET 3A 500V 50W 3Ω

Parameters

Open channel resistance:	3Ohm
Max. drain current:	2,5A
Max. power loss:	50W
Case:	TO220
Manufacturer:	LGE
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

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• Parameters

Open channel resistance:	3Ohm
Max. drain current:	2,5A
Max. power loss:	50W
Case:	TO220
Manufacturer:	LGE
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	20V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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