IRF820A

Symbol Micros: TIRF820a

40754

TIRF820a

Contractor Symbol:

Case : TO220

Datasheet

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N-MOSFET 2.5A 500V 50W 3Ω

Parameters

Open channel resistance:	3Ohm
Max. drain current:	2,5A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET

All parameters

Manufacturer:: Siliconix Manufacturer part number: IRF820A RoHS Case style: TO220  

In stock:

100 pcs.

Quantity of pcs.	2+	10+	50+	100+	400+
Net price (EUR)	0,8803	0,5517	0,4320	0,4085	0,3827

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Packaging:
50/100 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	3Ohm
Max. drain current:	2,5A
Max. power loss:	50W
Case:	TO220
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Transistor type:	N-MOSFET
Max. gate-source Voltage:	30V
Operating temperature (range):	-55°C ~ 150°C
Mounting:	THT

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