IRF820A

Symbol Micros: TIRF820a
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Case : TO220
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N-MOSFET 2.5A 500V 50W 3Ω
Parameters
Open channel resistance: 3Ohm
Max. drain current: 2,5A
Max. power loss: 50W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF820A RoHS Case style: TO220  
In stock:
100 pcs.
Quantity of pcs. 2+ 10+ 50+ 100+ 400+
Net price (EUR) 0,8659 0,5426 0,4249 0,4018 0,3764
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Packaging:
50/100
Open channel resistance: 3Ohm
Max. drain current: 2,5A
Max. power loss: 50W
Case: TO220
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 30V
Operating temperature (range): -55°C ~ 150°C
Mounting: THT

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