IRF8313

Symbol Micros: TIRF8313
Contractor Symbol:
Case : SOP08
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2xN-MOSFET HEXFET 9.7A 30V 2W 0.0155Ω
Parameters
Open channel resistance: 21,6mOhm
Max. drain current: 9,7A
Max. power loss: 2W
Case: SOP08
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 30V
Transistor type: 2xN-MOSFET
Manufacturer:: Infineon Manufacturer part number: IRF8313TR RoHS Case style: SOP08t/r  
In stock:
3463 pcs.
Quantity of pcs. 2+ 10+ 50+ 200+ 1000+
Net price (EUR) 0,8437 0,5341 0,4207 0,3829 0,3663
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Packaging:
4000
Manufacturer:: Infineon Manufacturer part number: IRF8313TRPBF Case style: SOP08  
External warehouse:
2600 pcs.
Quantity of pcs. 50+ (Need a significantly larger quantity? Ask for price).
Net price (EUR) 0,3663
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Packaging:
50
Delivery within 4-7 business days.
Minimum order amount
must exceed 20 Euro.
Open channel resistance: 21,6mOhm
Max. drain current: 9,7A
Max. power loss: 2W
Case: SOP08
Manufacturer: Infineon (IRF)
Max. drain-source voltage: 30V
Transistor type: 2xN-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 175°C
Mounting: SMD

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