IRF840S smd

Symbol Micros: TIRF840s
Contractor Symbol:
Case : TO263 (D2PAK)
N-MOSFET 8A 500V 125W 0.85Ω
Parameters
Open channel resistance: 850mOhm
Max. drain current: 8A
Max. power loss: 125W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Manufacturer:: Siliconix Manufacturer part number: IRF840SPBF RoHS Case style: TO263 (D2PAK)  
In stock:
150 pcs.
Quantity of pcs. 1+ 5+ 50+ 150+ 300+
Net price (EUR) 1,2802 0,8936 0,7130 0,6852 0,6736
Add to comparison tool
Packaging:
50/150
Open channel resistance: 850mOhm
Max. drain current: 8A
Max. power loss: 125W
Case: TO263 (D2PAK)
Manufacturer: VISHAY
Max. drain-source voltage: 500V
Transistor type: N-MOSFET
Max. gate-source Voltage: 20V
Operating temperature (range): -55°C ~ 150°C
Mounting: SMD