IRF840S smd

Symbol Micros: TIRF840s

30819

TIRF840s

Contractor Symbol:

Case : TO263 (D2PAK)

Datasheet

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N-MOSFET 8A 500V 125W 0.85Ω

Parameters

Open channel resistance:	850mOhm
Max. drain current:	8A
Max. power loss:	125W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	20V

All parameters

Manufacturer:: Vishay Manufacturer part number: IRF840S RoHS Case style: TO263 (D2PAK) Datasheet

In stock:

250 pcs.

Quantity of pcs.	1+	5+	20+	50+	250+
Net price (EUR)	1,2251	0,8549	0,7246	0,6811	0,6446

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Packaging:
50/250 Quantity (multiple: 1)

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• Parameters

Open channel resistance:	850mOhm
Max. drain current:	8A
Max. power loss:	125W
Case:	TO263 (D2PAK)
Manufacturer:	VISHAY
Max. drain-source voltage:	500V
Max. gate-source Voltage:	20V
Transistor type:	N-MOSFET
Operating temperature (range):	-55°C ~ 150°C
Mounting:	SMD

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